標題: Ge Epitaxial Growth on GaAs Substrates for Application to Ge-Source/Drain GaAs MOSFETs
作者: Luo, Guang-Li
Han, Zong-You
Chien, Chao-Hsin
Ko, Chih-Hsin
Wann, Clement H.
Lin, Hau-Yu
Shen, Yi-Ling
Chung, Cheng-Ting
Huang, Shih-Chiang
Cheng, Chao-Ching
Changb, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2010
摘要: Ge films were epitaxially grown on GaAs(100) substrates and Ga(0.88)In(0.12)As(100) virtual substrates using an ultrahigh vacuum/chemical vapor deposition system. The incubation time of Ge growth depends on Ga(In)As surfaces that were processed by different wet chemical solutions. Growth behaviors, such as island growth at the initial stages and selective growth into recessed regions of GaAs, were studied by transmission electron microscopy. To test the quality of Ge grown on GaAs, an n(+)-Ge/p-GaAs diode was fabricated. We propose that through Ge selective epitaxial growth, Ge can be used as the source-drain of a GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) to overcome some intrinsic limitations of this device. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3246000] All rights reserved.
URI: http://hdl.handle.net/11536/6178
http://dx.doi.org/10.1149/1.3246000
ISSN: 0013-4651
DOI: 10.1149/1.3246000
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 157
Issue: 1
起始頁: H27
結束頁: H30
顯示於類別:期刊論文


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