標題: Effect of Threading Dislocations on Local Contacts in Epitaxial ZnO Films
作者: Lin, C. Y.
Liu, W. -R.
Chang, C. S.
Hsu, C. -H.
Hsieh, W. F.
Chien, F. S. -S.
光電工程學系
Department of Photonics
關鍵字: atomic force microscopy;edge dislocations;electrical conductivity;grain boundaries;II-VI semiconductors;Schottky barriers;semiconductor epitaxial layers;vacancies (crystal);wide band gap semiconductors;zinc compounds
公開日期: 2010
摘要: Local conductance of a ZnO epifilm with a columnar-grain structure was studied by conductive-mode atomic force microscopy. The probe-ZnO junction at the grain boundary with high density edge threading dislocations (TDs) behaves as a Schottky contact while the junction at the epitaxial core behaves as an ohmic contact, resulting in the nonuniformity of conductance throughout the film. The calculated Schottky barrier is 0.4 +/- 0.025 eV. The point defects of doubly charged Zn vacancies accumulated at the edge TDs induce local band bending of ZnO, thus contributing to the Schottky nature at the grain boundary.
URI: http://hdl.handle.net/11536/6177
http://dx.doi.org/10.1149/1.3274825
ISSN: 0013-4651
DOI: 10.1149/1.3274825
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 157
Issue: 3
起始頁: H268
結束頁: H271
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