|標題:||Effect of Threading Dislocations on Local Contacts in Epitaxial ZnO Films|
|作者:||Lin, C. Y.|
Liu, W. -R.
Chang, C. S.
Hsu, C. -H.
Hsieh, W. F.
Chien, F. S. -S.
Department of Photonics
|關鍵字:||atomic force microscopy;edge dislocations;electrical conductivity;grain boundaries;II-VI semiconductors;Schottky barriers;semiconductor epitaxial layers;vacancies (crystal);wide band gap semiconductors;zinc compounds|
|摘要:||Local conductance of a ZnO epifilm with a columnar-grain structure was studied by conductive-mode atomic force microscopy. The probe-ZnO junction at the grain boundary with high density edge threading dislocations (TDs) behaves as a Schottky contact while the junction at the epitaxial core behaves as an ohmic contact, resulting in the nonuniformity of conductance throughout the film. The calculated Schottky barrier is 0.4 +/- 0.025 eV. The point defects of doubly charged Zn vacancies accumulated at the edge TDs induce local band bending of ZnO, thus contributing to the Schottky nature at the grain boundary.|
|期刊:||JOURNAL OF THE ELECTROCHEMICAL SOCIETY|
|Appears in Collections:||Articles|
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