標題: Background and Photoexcited Carrier Dependence of Terahertz Radiation from Mg-Doped Nonpolar Indium Nitride Films
作者: Ahn, Hyeyoung
Yeh, Yi-Jou
Hong, Yu-Liang
Gwo, Shangjr
光電工程學系
Department of Photonics
公開日期: 2010
摘要: We report terahertz (THz) generation from Mg-doped nonpolar (a-plane) InN (a-InN:Mg). While the amplitude and polarity of the THz field from Mg-doped polar (c-plane) InN depend on the background carrier density, the p-polarized THz field from a-InN: Mg has background carrier-insensitive intensity and polarity, which can be attributed to carrier transport in a polarization-induced in-plane electric field. A small but apparent azimuthal angle dependence of the THz field from a-InN:Mg shows the additional contribution of the second-order nonlinear optical effect. Meanwhile, in this study, we did not observe the contribution of the intrinsic in-plane electric field which is significant for high stacking fault density nonpolar InN. (C) 2010 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11536/6115
http://dx.doi.org/10.1143/APEX.3.122105
ISSN: 1882-0778
DOI: 10.1143/APEX.3.122105
期刊: APPLIED PHYSICS EXPRESS
Volume: 3
Issue: 12
顯示於類別:期刊論文