標題: Large-Grain Polycrystalline Silicon Solar Cell on Epitaxial Thickening of AIC Seed Layer by Hot Wire CVD
作者: Wang, Jui-Hao
Lien, Shui-Yang
Chen, Chia-Fu
Whang, Wha-Tzong
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Aluminum-induced crystallization (AIC);hot-wire chemical vapor deposition (HWCVD);polycrystalline silicon (poly-Si)
公開日期: 1-一月-2010
摘要: Large-grain polycrystalline silicon (poly-Si) films were prepared on foreign substrates by the epitaxial thickening of seed layers. The seed layers were formed by aluminum-induced crystallization (AIC). Large-grain n-i-p poly-Si solar cells were deposited on epitaxial seeds by hot-wire chemical vapor deposition (HWCVD). Highly (93%) crystalline fractions with a lateral grain size of 5 mu m and an intrinsic layer were grown without incubation. These techniques were employed to prepare large-grain poly-Si thin-film solar cells. An ITO/n-i-p (HWCVD)/p+ (AIC)/Ti/glass-structured poly-Si thin-film solar cell with an initial efficiency of 5.6% was obtained.
URI: http://dx.doi.org/10.1109/LED.2009.2035141
http://hdl.handle.net/11536/6108
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2035141
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 1
起始頁: 38
結束頁: 40
顯示於類別:期刊論文


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  1. 000273090800014.pdf