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dc.contributor.authorYou, KFen_US
dc.contributor.authorChang, MCen_US
dc.contributor.authorWu, CYen_US
dc.date.accessioned2014-12-08T15:01:09Z-
dc.date.available2014-12-08T15:01:09Z-
dc.date.issued1998-01-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.658837en_US
dc.identifier.urihttp://hdl.handle.net/11536/60-
dc.description.abstractPlasma ashing process-induced oxide damage is studied quantitatively in this paper, To simulate thin gate-oxide damage due to plasma ashing process, a new equivalent circuit model is proposed by including a differential capacitance, a parasitic resistance, an offset flatband voltage, and the effects of feedback on the interface-state and trapped oxide charge densities generated during plasma ashing process, According to this new model, computation of gate oxide charging current is performed by correlating to the latent interface-state density, The test n-MOSFET devices including different antenna-ratios are measured, and excellent agreement is obtained as compared with measured results, Moreover, the deficiency of the previous model is stated and compared, In addition, the effects of substrate doping concentration on plasma-induced oxide damage are also investigated as well as those of plasma ion density, plasma uniformity, thin gate-oxide thickness, Therefore, the relationships between interface state/oxide traps and antenna ratio are linked to provide a guideline for circuit designers and the plasma ashing process-induced damage can be predicted.en_US
dc.language.isoen_USen_US
dc.titleA new simulation model for plasma ashing process-induced oxide degradation in MOSFETen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.658837en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume45en_US
dc.citation.issue1en_US
dc.citation.spage239en_US
dc.citation.epage246en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000071225200033-
dc.citation.woscount5-
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