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dc.contributor.authorLi, Yu-Taien_US
dc.contributor.authorShi, Jin-Weien_US
dc.contributor.authorHuang, C. -Y.en_US
dc.contributor.authorChen, Nan-Weien_US
dc.contributor.authorChen, Shu-Hanen_US
dc.contributor.authorChyi, Jen-Innen_US
dc.contributor.authorWang, Yi-Chaoen_US
dc.contributor.authorYang, Chan-Shanen_US
dc.contributor.authorPan, Ci-Lingen_US
dc.date.accessioned2014-12-08T15:07:43Z-
dc.date.available2014-12-08T15:07:43Z-
dc.date.issued2010-01-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JQE.2009.2023366en_US
dc.identifier.urihttp://hdl.handle.net/11536/6071-
dc.description.abstractWe describe in detail the characterization of two high-power photonic transmitters based on two different kinds of high-power photodiodes, one a GaAs/AlGaAs based uni-traveling-carrier photodiode (UTC-PD) and the other a separated-transport-recombination photodiode (STR-PD). The diodes operate under optical pulse excitation at the 800 nm wavelength. Both PDs have the same total depletion layer thickness (same theoretical RC-limited bandwidth) and are m integrated with the same broadband micro-machined circular disk monopole antennas to radiate strong sub-THz pulses. However the STR-PD based transmitter exhibits very different dynamic and static performance from that of the UTC-PD based transmitter due to the existence of a low-temperature-grown GaAs (LTG-GaAs) based recombination center inside the active region, and the much thinner thickness of effective depletion layer. Under optical pulse excitation (similar to 480 pJ/pulse), the STR-PD based transmitter exhibits a much lower maximum averaged output photocurrent (1.2 mA versus 0.3 mA) than that of the UTC-PD transmitter, although the radiated electrical pulse-width and maximum peak-power, which are measured by the same THz time-domain spectroscopic (TDS) system, of both devices are comparable. These results indicate that although the recombination center in the STR-PD degrades its DC responsivity, it effectively improves the high-speed and output power performance of the device and eliminates the DC component of the photocurrent, which should minimize device-heating problem during high-power operation. The radiated waveforms of both devices under intense optical pulse illumination also exhibit excellent linearity and strong bias dependent magnitude. This suggests their suitability for application as photonic emitters and possibly as a data modulator in sub-THz impulse-radio communication systems.en_US
dc.language.isoen_USen_US
dc.subjectHigh-power photodiodeen_US
dc.subjectuni-traveling carrier photodiode (UTC-PD)en_US
dc.subjectseparated-transport recombination photodiode (STR-PD)en_US
dc.subjectphotonic transmitteren_US
dc.subjectsubmillimeter-wave terahertz (THz)en_US
dc.titleCharacterization and Comparison of GaAs/AlGaAs Uni-Traveling Carrier and Separated-Transport-Recombination Photodiode Based High-Power Sub-THz Photonic Transmittersen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JQE.2009.2023366en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume46en_US
dc.citation.issue1en_US
dc.citation.spage19en_US
dc.citation.epage27en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000272477700002-
dc.citation.woscount5-
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