Title: Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation
Authors: Shiu, Jin-Yu
Lu, Chung-Yu
Su, Ting-Yi
Huang, Rong-Tan
Zirath, Herbert
Rorsman, Niklas
Chang, Edward Yi
材料科學與工程學系
Department of Materials Science and Engineering
Issue Date: 2010
Abstract: A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs). A high sheet resistivity and thermally stable isolation were demonstrated. The microstructures of implanted and postannealed specimens were investigated by transmission electron microscopy (TEM). The dependences of the sheet resistivity and different postannealing temperatures were correlated with the defect clusters and microstructure of lattice stacking faults. After 300 degrees C annealing, the sheet resistivity was higher than 10(12) Omega/square, which was attributed to the severe defect interaction eliminating the trapping centers and reducing the leakage current. A maximum output power density of 5.3 W/mm at V(gs) = -4 V and V(ds) = 50 V at 3 GHz was demonstrated on lag-free HEMTs without field plates on sapphire substrate. (C) 2010 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11536/6047
http://dx.doi.org/10.1143/JJAP.49.021001
ISSN: 0021-4922
DOI: 10.1143/JJAP.49.021001
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 49
Issue: 2
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