標題: Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs
作者: Lai, Erh-Kun
Chien, Wei-Chih
Chen, Yi-Chou
Hong, Tian-Jue
Lin, Yu-Yu
Chang, Kuo-Pin
Yao, Yeong-Der
Lin, Pang
Horng, Sheng-Fu
Gong, Jeng
Tsai, Shih-Chang
Lee, Ching-Hsiung
Hsieh, Sheng-Hui
Chen, Chun-Fu
Shih, Yen-Hao
Hsieh, Kuang-Yeu
Liu, Rich
Lu, Chih-Yuan
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2010
摘要: A complementary metal oxide semiconductor (CMOS)-compatible WO(x) based resistive memory has been developed. The WO(x) memory layer is made from rapid thermal oxidation of W plugs. The device performs excellent electrical properties. The switching speed is extremely fast (similar to 2 ns) and the programming voltage (< 1: 4 V) is low. For single-level cell (SLC) operation, the device shows a large resistance window, and 10(8)-cycle endurance. For multi-level cell (MLC) operation, it demonstrates 2-bit/cell storage with the endurance up to 10000 times. The rapid thermal oxidation (RTO) WO(x) resistance random access memory (RRAM) is very promising for both high-density and embedded memory applications. (C) 2010 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11536/6042
http://dx.doi.org/10.1143/JJAP.49.04DD17
ISSN: 0021-4922
DOI: 10.1143/JJAP.49.04DD17
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 49
Issue: 4
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