標題: GaN Thickness Effect on Directional Light Enhancement from GaN-Based Film-Transferred Photonic Crystal Light-Emitting Diodes
作者: Lai, Chun-Feng
Chao, Chia-Hsin
Kuo, Hao-Chung
Yu, Peichen
Yen, His-Hsuan
Yeh, Wen-Yung
光電工程學系
Department of Photonics
公開日期: 2010
摘要: Directional light enhancement behavior including collimated far-field patterns sensitively depending on both photonic crystal (PhC) lattice constant and GaN thickness from GaN film-transferred light-emitting diodes (FTLEDs) with a triangular PhC lattice has been experimentally studied. Far-field pattern measurement in the Gamma-M and Gamma-K directions of GaN PhC FTLEDs with various lattice constants and GaN thicknesses revealed different far-field profiles as detemined on the basis of guided mode extraction of Bragg's diffraction. Additionally, three-dimensional (3D) far-field measurement revealing the PhC diffraction patterns was also demonstrated. We also used the 3D finite-different time-domain method to confirm the experimental results. (C) 2010 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11536/6040
http://dx.doi.org/10.1143/JJAP.49.04DG09
ISSN: 0021-4922
DOI: 10.1143/JJAP.49.04DG09
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 49
Issue: 4
顯示於類別:期刊論文


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  1. 000277301300132.pdf