標題: Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam Epitaxy
作者: Ku, Jui-Tai
Yang, Tsung-Hsi
Chang, Jet-Rung
Wong, Yuen-Yee
Chou, Wu-Ching
Chang, Chun-Yen
Chen, Chiang-Yao
材料科學與工程學系
電子物理學系
友訊交大聯合研發中心
Department of Materials Science and Engineering
Department of Electrophysics
D Link NCTU Joint Res Ctr
公開日期: 2010
摘要: Strain-free gallium nitride (GaN) overgrowth on GaN nano-rods is realized by RF-plasma assisted molecular beam epitaxy (RF-MBE) on silicon (Si) substrate. The strain-free condition was identified by the strong free A exciton (FX(A)) photoluminescence (PL) peak at 3.478 eV and the E(2) high phonon Raman shift of 567 cm(-1). It is clearly demonstrated that the critical diameter of GaN nano-rods is around 80nm for the overgrowth of strain-free GaN. The blue-shift of PL peak energy and phonon Raman energy with decreasing the diameter of nano-rod result from the strain relaxation of overgrowth GaN. (C) 2010 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11536/6039
http://dx.doi.org/10.1143/JJAP.49.04DH06
ISSN: 0021-4922
DOI: 10.1143/JJAP.49.04DH06
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 49
Issue: 4
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