標題: Improvement in Crystalline Quality of InGaN-Based Epilayer on Sapphire via Nanoscaled Epitaxial Lateral Overgrowth
作者: Chiu, Ching-Hsueh
Lin, Da-Wei
Li, Zhen-Yu
Chiu, Chin-Hua
Chao, Chu-Li
Tu, Chia-Cheng
Kuo, Hao-Chung
Lu, Tien-Chang
Wang, Shing-Chung
光電工程學系
Department of Photonics
公開日期: 2010
摘要: In this study, a high-performance GaN-based light-emitting diode (LED) was achieved using a nanocolumn patterned sapphire substrate (NCPSS) with low-pressure metal-organic chemical vapor deposition (LP-MOCVD). The surface roughness was evaluated by atomic force microscopy (AFM). The mechanisms of carrier localization in the GaN-based LED fabricated on NCPSS were discussed referring to the results obtained from the power-dependent photoluminescence measurements. Moreover, from the transmission electron microscopy (TEM) image, the threading dislocation densities (TDDs) through the GaN-based LED fabricated on NCPSS were found to be about 10 times lower than those fabricated on planar substrates. Finally, the internal quantum efficiency (IQE) of the GaN-based LED fabricated on NCPSS was as high as 48% at 30 mW, corresponding to a current of 20 mA, which is higher than that of a GaN-based LED fabricated on a planar sapphire substrate by 8%. The use of NCPSS is suggested to be effective for elevating the emission efficiency of the GaN-based LED owing to an improvement in crystal quality. (C) 2010 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11536/6033
http://dx.doi.org/10.1143/JJAP.49.105501
ISSN: 0021-4922
DOI: 10.1143/JJAP.49.105501
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 49
Issue: 10
顯示於類別:期刊論文


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