標題: Evaluation of the nanoindentation behaviors of SiGe epitaxial layer on Si substrate
作者: He, Bo-Ching
Cheng, Chun-Hu
Wen, Hua-Chiang
Lai, Yi-Shao
Yang, Ping-Feng
Lin, Meng-Hung
Wu, Wen-Fa
Chou, Chang-Pin
機械工程學系
電子工程學系及電子研究所
Department of Mechanical Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2010
摘要: In this paper, ultra-high vacuum chemical vapor deposition (UHV/CVD) was employed to synthesize silicon-germanium (SiGe), and sequence to endure annealing treatment. Morphological characterization, roughness, and microstructural morphology were observed by means of scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The elements distribution, crystallographic, and nanomechanical behavior were carried out using energy-dispersive Xray spectroscopy (EDS) mapping technique, X-ray diffraction (XRD), and nanoindentation technique. The annealing treated SiGe leads to the 2D germanium segregation on the surface. The phenomenon is interpreted in terms of dislocation-induced structural changes in annealing treatment, Thus, the dislocation propagation in the microstructure was observed. Subsequently hardness and elastic modulus were increased because of a comparatively unstable microstructure after annealing treatment. (C) 2009 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2009.08.005
http://hdl.handle.net/11536/6018
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2009.08.005
期刊: MICROELECTRONICS RELIABILITY
Volume: 50
Issue: 1
起始頁: 63
結束頁: 69
Appears in Collections:Articles


Files in This Item:

  1. 000274610400009.pdf