Title: Study of the inversion behaviors of Al(2)O(3)/In(x)Ga(1-x)As metal-oxide-semiconductor capacitors with different In contents
Authors: Wu, Yun-Chi
Chang, Edward Yi
Lin, Yueh-Chin
Kei, Chi-Chung
Hudait, Mantu K.
Radosavljevic, Marko
Wong, Yuen-Yee
Chang, Chia-Ta
Huang, Jui-Chien
Tang, Shih-Hsuan
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Jan-2010
Abstract: In(x)Ga(1-x)As III-V compound semiconductor metal-oxide-semiconductor field-effect transistors have become a popular topic recently due to the higher drift velocity, and lower effective mass of the In(x)Ga(1-x)As materials. The impact of In content on the accumulation and inversion behaviors of the Al(2)O(3)/In(x)Ga(1-x)As capacitors is investigated in this study. For the various In(x)Ga(1-x)As materials studied, the Al(2)O(3)/InAs MOS system showed the strongest inversion phenomena due to the shorter response time of minority carrier of InAs compared to other In(x)Ga(1-x)As materials. Also, very low gate leakage current in the 10(-8) A/cm(2) range was observed for these capacitors. These results demonstrate that Al(2)O(3)/InAs MOS system with strong inversion phenomena and low leakage gate current is potential candidate for future high-performance low power logic MOSFET applications. (C) 2009 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2009.09.033
ISSN: 0038-1101
DOI: 10.1016/j.sse.2009.09.033
Volume: 54
Issue: 1
Begin Page: 37
End Page: 41
Appears in Collections:Articles