標題: Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(100)-2 x 1 surfaces
作者: Hsu, C. C.
Lin, W. H.
Ou, Y. S.
Su, W. B.
Chang, C. S.
Wu, C. I.
Tsong, Tien T.
電子物理學系
Department of Electrophysics
關鍵字: Pb(100) thin film;Pb(111) thin film;Si(111) surface;Electronic confinement;Low-temperature growth;STM
公開日期: 1-一月-2010
摘要: The growth of Pb films on the Si(1 0 0)-2 x 1 surface has been investigated at low temperature using scanning tunneling microscopy Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed The island thickness is confined within four to nine atomic layers at low coverage Among these islands. those with a thickness of six layers are most abundant Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectioscopy. They are found to be identical to those taken oil the Pb(1 1 1) islands grown oil the Si(1 1 1)7 x 7 surface. Besides Pb(1 1 1) islands. two additional types of Pb islands are formed. rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90 degrees from a terrace to the adjacent one This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 x 1 substrate (C) 2009 Elsevier B.V. All rights reserved
URI: http://dx.doi.org/10.1016/j.susc.2009.09.025
http://hdl.handle.net/11536/6003
ISSN: 0039-6028
DOI: 10.1016/j.susc.2009.09.025
期刊: SURFACE SCIENCE
Volume: 604
Issue: 1
起始頁: 1
結束頁: 5
顯示於類別:期刊論文


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