標題: Improved performance and reliability for metal-oxide-semiconductor field-effect-transistor with fluorinated silicate glass passivation layer
作者: Hsieh, Chih-Ren
Chen, Yung-Yu
Lou, Jen-Chung
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: fluorine;glass;hafnium compounds;MOSFET;passivation;permittivity;semiconductor device reliability;silicon compounds;tunnelling
公開日期: 11-Jan-2010
摘要: The superior characteristics of the fluorinated HfO(2)/SiON gate dielectric are investigated comprehensively. Fluorine is incorporated into the gate dielectric through fluorinated silicate glass (FSG) passivation layer to form fluorinated HfO(2)/SiON dielectric. Fluorine incorporation has been proved to eliminate both bulk and interface trap densities due to Hf-F and Si-F bonds formation, which can strongly reduce trap generation as well as trap-assisted tunneling during subsequently constant voltage stress, and results in improved electrical characteristics and dielectric reliabilities. The results clearly indicate that the fluorinated HfO(2)/SiON gate dielectric using FSG passivation layer becomes a feasible technology for future ultrathin gate dielectric applications.
URI: http://dx.doi.org/10.1063/1.3279140
http://hdl.handle.net/11536/5978
ISSN: 0003-6951
DOI: 10.1063/1.3279140
期刊: APPLIED PHYSICS LETTERS
Volume: 96
Issue: 2
結束頁: 
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