Title: Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers
Authors: Shu, G. W.
Wang, J. S.
Shen, J. L.
Hsiao, R. S.
Chen, J. F.
Lin, T. Y.
Wu, C. H.
Huang, Y. H.
Yang, T. N.
電子物理學系
Department of Electrophysics
Keywords: InAs;Quantum dots;Photoluminescence
Issue Date: 15-Jan-2010
Abstract: Photoluminescence (PL), PL excitation (PLE), and time-resolved PL were used to study effects of InGaAs layers on the optical properties of InAs/GaAs quantum dots (QDs). A rich fine structure in the excited states of confined excitons (up to n = 4 quantum states) was observed, providing useful information to study the quantum states in the InAs/GaAs QDs. A significant redshift of the PL peak energy for the QDs covered by InGaAs layers was observed, attributing to the decrease of the QD strain and the lowing of the quantum confinement. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mseb.2009.09.028
http://hdl.handle.net/11536/5971
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2009.09.028
Journal: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
Volume: 166
Issue: 1
Begin Page: 46
End Page: 49
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