Title: Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach
Authors: Wu, Yu-Sheng
Fan, Ming-Long
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Line edge roughness (LER);MOSFET;random dopant fluctuation (RDF);switching time (ST)
Issue Date: 1-Feb-2010
Abstract: This letter investigates the impacts of random dopant fluctuation (RDF) and line edge roughness (LER) on the switching-time (ST) variation for nanoscale MOSFETs using the effective-drive-current (I(eff)) approach that decouples the ST variation into transition-charge (Delta Q) and I(eff) variations. Although the RDF has been recognized as the main variation source to the threshold-voltage variation, this letter indicates that the relative importance of LER increases as the ST variation is considered.
URI: http://dx.doi.org/10.1109/LED.2009.2037247
http://hdl.handle.net/11536/5940
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2037247
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 2
Begin Page: 162
End Page: 164
Appears in Collections:Articles


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