標題: Using Phosphorus-Doped alpha-Si Gettering Layers to Improve NILC Poly-Si TFT Performance
作者: Wang, Bau-Ming
Wu, YewChung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Ni-metal-induced lateral crystallization (NILC);polycrystalline silicon (poly-Si) thin-film transistors (TFTs);Ni-gettering layers
公開日期: 1-二月-2010
摘要: Ni-metal-induced lateral crystallization (NILC) has been utilized to fabricate polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the current crystallization technology often leads to trapped Ni and NiSi(2) precipitates, thus degrading device performance. In this study, phosphorus-doped amorphous silicon (p-alpha-Si) and chemical oxide (chem-SiO(2)) films were used as Ni-gettering layers. After a gettering process, the Ni impurity within the NILC poly-Si film and the leakage current were both reduced, while the on/off current ratio was increased. This gettering process is compatible with NILC TFT processes and suitable for large-area NILC poly-Si films.
URI: http://dx.doi.org/10.1007/s11664-009-1027-5
http://hdl.handle.net/11536/5936
ISSN: 0361-5235
DOI: 10.1007/s11664-009-1027-5
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 39
Issue: 2
起始頁: 157
結束頁: 161
顯示於類別:期刊論文


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  1. 000273811000003.pdf