Title: Stacked Silicon Nanowires with Improved Field Enhancement Factor
Authors: Tzeng, Yu-Fen
Wu, Hung-Chi
Sheng, Pei-Sun
Tai, Nyan-Hwa
Chiu, Hsin Tien
Lee, Chi Young
Lin, I-Nan
應用化學系
Department of Applied Chemistry
Keywords: silicon nanowires;electroless metal deposition;electron field emission
Issue Date: 1-Feb-2010
Abstract: This work describes newly structured stacked silicon nanowires (s-SiNWs), consisting of nanosized silicon wires on top of silicon microrods (SiMRs) and exhibiting pronouncedly superior electron held emission (EFE) characteristics to the conventional SiNWs, by using a two-step electroless metal deposition process. Experimental results indicate that for these s-SiNWs, the electrostatic "screen effect" is markedly suppressed and the held enhancement factor (beta-value) is significantly increased ((beta)(s-SiNWs) = 2533). Additionally, the turn-on held (Eo) for triggering the EFE process is reduced to a level comparable with that of carbon nanotubes, viz. (E(0))(s-SiNWs) = 2.0 V/mu m. This simple and robust modified electroless metal deposition approach does not require either a high temperature or an expensive photolithographic process and possesses great potential for applications.
URI: http://dx.doi.org/10.1021/am900490m
http://hdl.handle.net/11536/5906
ISSN: 1944-8244
DOI: 10.1021/am900490m
Journal: ACS APPLIED MATERIALS & INTERFACES
Volume: 2
Issue: 2
Begin Page: 331
End Page: 334
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