標題: Leakage performance and breakdown mechanism of silicon-rich oxide and fluorinated oxide prepared by electron cyclotron resonance chemical vapor deposition
作者: Chang, KM
Wang, SW
Yeh, TH
Li, CH
Luo, JJ
奈米中心
Nano Facility Center
公開日期: 1-五月-1997
摘要: The characteristics of silicon-rich oxide and fluorinated oxide (FxSiOy) films deposited in an electron cyclotron resonance chemical vapor deposition system with SiH4 and O-2 as the oxide sources and CF4 as the fluorinating precursor are investigated in this work. According to experimental results, the dangling bonds in Si-rich oxide behave as positively by charged electron traps and degrade the dielectric strength by lowering the barrier height for Fowler-Nordheim tunneling. On the other hand, a small amount of incorporated F atoms will passivate and neutralize these excess Si dangling bonds, thereby elevating the dielectric strength. However, too much incorporated F will degrade the pretunneling leakage performance owing to the porosity and fatigues structure in FxSiOy film. The high leakage and even breakdown at low field strongly limits the incorporated F concentration in FxSiOy film and the lowering of dielectric constant.
URI: http://hdl.handle.net/11536/590
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 144
Issue: 5
起始頁: 1754
結束頁: 1759
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XD00600053.pdf