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dc.contributor.authorChang, Chia-Taen_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorKuo, Chien-Ien_US
dc.contributor.authorHuang, Jui-Chienen_US
dc.contributor.authorLu, Chung-Yuen_US
dc.contributor.authorMiyamoto, Yasuyukien_US
dc.date.accessioned2014-12-08T15:07:28Z-
dc.date.available2014-12-08T15:07:28Z-
dc.date.issued2010-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2009.2037167en_US
dc.identifier.urihttp://hdl.handle.net/11536/5894-
dc.description.abstractWe demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Omega . mm and a low gate leakage current of 0.9 mu A/mm when biased at V(GS) = -3 V and V(DS) = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.en_US
dc.language.isoen_USen_US
dc.subjectAlGaN/GaNen_US
dc.subjecthigh-electron mobility transistor (HEMT)en_US
dc.subjectnoise figureen_US
dc.subjectrecessed gateen_US
dc.title30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2009.2037167en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume31en_US
dc.citation.issue2en_US
dc.citation.spage105en_US
dc.citation.epage107en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000274018000005-
dc.citation.woscount7-
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