標題: 30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs
作者: Chang, Chia-Ta
Hsu, Heng-Tung
Chang, Edward Yi
Kuo, Chien-I
Huang, Jui-Chien
Lu, Chung-Yu
Miyamoto, Yasuyuki
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: AlGaN/GaN;high-electron mobility transistor (HEMT);noise figure;recessed gate
公開日期: 1-Feb-2010
摘要: We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 Omega . mm and a low gate leakage current of 0.9 mu A/mm when biased at V(GS) = -3 V and V(DS) = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.
URI: http://dx.doi.org/10.1109/LED.2009.2037167
http://hdl.handle.net/11536/5894
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2037167
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 2
起始頁: 105
結束頁: 107
Appears in Collections:Articles


Files in This Item:

  1. 000274018000005.pdf