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dc.contributor.authorLi, Yimingen_US
dc.contributor.authorHwang, Chih-Hongen_US
dc.contributor.authorLi, Tien-Yehen_US
dc.contributor.authorHan, Ming-Hungen_US
dc.date.accessioned2014-12-08T15:07:27Z-
dc.date.available2014-12-08T15:07:27Z-
dc.date.issued2010-02-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2009.2036309en_US
dc.identifier.urihttp://hdl.handle.net/11536/5871-
dc.description.abstractThis paper, for the first time, estimates the influences of the intrinsic-parameter fluctuations consisting of metal-gate work-function fluctuation (WKF), process-variation effect (PVE), and random-dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field-effect transistors (MOSFETs) and circuits. The WKF and RDF dominate the threshold-voltage fluctuation (sigma V(th)); however, the WKF brings less impact on the gate capacitance and the cutoff frequency due to the screening effect of the inversion layer. The fluctuation of timing characteristics depends on the sigma V(th) and is therefore proportional to the trend of sigma V(th). The power fluctuation consisting of the dynamic, short-circuit, and static powers is further investigated. The total power fluctuation for the planar MOSFET circuits is 15.2%, which is substantial in the reliability of circuits and systems. The static power is a minor part of the total power; however, its fluctuation is significant because of the serious fluctuation of the leakage current. For an amplifier circuit, the high-frequency characteristics, the circuit gain, the 3-dB bandwidth, the unity-gain bandwidth power, and the power-added efficiency are explored consequently. Similar to the trend of the cutoff frequency, the PVE and RDF dominate both the device and circuit characteristic fluctuations due to the significant gate-capacitance fluctuations, and the WKF is less important at this simulation scenario. The extensive study assesses the fluctuations on circuit performance and reliability, which can, in turn, be used to optimize nanoscale MOSFETs and circuits.en_US
dc.language.isoen_USen_US
dc.subjectCircuiten_US
dc.subjectcoupled device-circuit simulationen_US
dc.subjectemerging device technologyen_US
dc.subjectintrinsic-parameter fluctuationen_US
dc.subjectmodeling and simulationen_US
dc.subjectnanoscale MOSFETen_US
dc.subjectpower fluctuationen_US
dc.titleProcess-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologiesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2009.2036309en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume57en_US
dc.citation.issue2en_US
dc.citation.spage437en_US
dc.citation.epage447en_US
dc.contributor.department傳播研究所zh_TW
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000273764800012-
dc.citation.woscount29-
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