標題: Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies
作者: Li, Yiming
Hwang, Chih-Hong
Li, Tien-Yeh
Han, Ming-Hung
傳播研究所
電機工程學系
Institute of Communication Studies
Department of Electrical and Computer Engineering
關鍵字: Circuit;coupled device-circuit simulation;emerging device technology;intrinsic-parameter fluctuation;modeling and simulation;nanoscale MOSFET;power fluctuation
公開日期: 1-二月-2010
摘要: This paper, for the first time, estimates the influences of the intrinsic-parameter fluctuations consisting of metal-gate work-function fluctuation (WKF), process-variation effect (PVE), and random-dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field-effect transistors (MOSFETs) and circuits. The WKF and RDF dominate the threshold-voltage fluctuation (sigma V(th)); however, the WKF brings less impact on the gate capacitance and the cutoff frequency due to the screening effect of the inversion layer. The fluctuation of timing characteristics depends on the sigma V(th) and is therefore proportional to the trend of sigma V(th). The power fluctuation consisting of the dynamic, short-circuit, and static powers is further investigated. The total power fluctuation for the planar MOSFET circuits is 15.2%, which is substantial in the reliability of circuits and systems. The static power is a minor part of the total power; however, its fluctuation is significant because of the serious fluctuation of the leakage current. For an amplifier circuit, the high-frequency characteristics, the circuit gain, the 3-dB bandwidth, the unity-gain bandwidth power, and the power-added efficiency are explored consequently. Similar to the trend of the cutoff frequency, the PVE and RDF dominate both the device and circuit characteristic fluctuations due to the significant gate-capacitance fluctuations, and the WKF is less important at this simulation scenario. The extensive study assesses the fluctuations on circuit performance and reliability, which can, in turn, be used to optimize nanoscale MOSFETs and circuits.
URI: http://dx.doi.org/10.1109/TED.2009.2036309
http://hdl.handle.net/11536/5871
ISSN: 0018-9383
DOI: 10.1109/TED.2009.2036309
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
Issue: 2
起始頁: 437
結束頁: 447
顯示於類別:期刊論文


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  1. 000273764800012.pdf