Title: A study of resistive switching effects on a thin FeO(x) transition layer produced at the oxide/iron interface of TiN/SiO(2)/Fe-contented electrode structures
Authors: Feng, Li-Wei
Chang, Chun-Yen
Chang, Yao-Feng
Chen, Wei-Ren
Wang, Shin-Yuan
Chiang, Pei-Wei
Chang, Ting-Chang
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Feb-2010
Abstract: Large (>10(2)) and stable resistance switching characteristics were demonstrated in TiN/SiO(2)/Fe structure due to the presence of a thin FeO(x) transition layer at the SiO(2)/Fe interface, produced spontaneously during the plasma-enhanced tetraethyl orthosilicate oxide deposition process. Addition of Pt into Fe electrode, i.e., a TiN/SiO(2)/Fe(0.73)Pt(0.27) structure, was observed to improve the data dispersion of switching parameters, associating with the decrease in Fe content inside the FeO(x) layer. Additionally, current-voltage fitting data shows that current transport mechanism is governed by Ohm's law in low voltage region and Pool-Frenkel behavior in high voltage region, consisting with FeO(x) phase transition characteristics.
URI: http://dx.doi.org/10.1063/1.3294632
ISSN: 0003-6951
DOI: 10.1063/1.3294632
Volume: 96
Issue: 5
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