Title: Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire
Authors: Cheng, Ji-Hao
Wu, YewChung Sermon
Liao, Wei-Chih
Lin, Bo-Wen
材料科學與工程學系
Department of Materials Science and Engineering
Keywords: dislocations;gallium compounds;III-V semiconductors;light emitting diodes;semiconductor epitaxial layers;wide band gap semiconductors
Issue Date: 1-Feb-2010
Abstract: Periodic triangle pyramidal array patterned sapphire substrates (PSSs) with various slanted angles were fabricated by wet etching. It was found beside normal wurtzite GaN, zinc blende GaN was found on the sidewall surfaces of PSS. The crystal quality and performance of PSS-LEDs improved with decrease in slanted angle from 57.4 degrees to 31.6 degrees. This is because most of the growth of GaN was initiated from c-planes. As the growth time increased, GaN epilayers on the bottom c-plane covered these pyramids by lateral growth causing the threading dislocation to bend toward the pyramids.
URI: http://dx.doi.org/10.1063/1.3304004
http://hdl.handle.net/11536/5853
ISSN: 0003-6951
DOI: 10.1063/1.3304004
Journal: APPLIED PHYSICS LETTERS
Volume: 96
Issue: 5
End Page: 
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