Title: Determination of the microstructure of Eu-treated ZnO nanowires by x-ray absorption
Authors: Huang, W. L.
Labis, J.
Ray, S. C.
Liang, Y. R.
Pao, C. W.
Tsai, H. M.
Du, C. H.
Pong, W. F.
Chiou, J. W.
Tsai, M. -H.
Lin, H. J.
Lee, J. F.
Chou, Y. T.
Shen, J. L.
Chen, C. W.
Chi, G. C.
Department of Photonics
Keywords: europium;EXAFS;II-VI semiconductors;nanowires;photoluminescence;thermal conductivity;wide band gap semiconductors;XANES;zinc compounds
Issue Date: 8-Feb-2010
Abstract: X-ray absorption near-edge structure (XANES), extended x-ray absorption fine structures (EXAFS), and photoluminescence measurements were used to elucidate the microstructural and photoluminescence properties of ZnO nanowires (ZnO-NWs) that had been treated with Eu by thermal diffusion. The O K- and Eu L(3)-edge XANES and EXAFS spectra at the Zn K- and Eu L(3)-edge verified the formation of Eu(2)O(3)-like layer on the surface of ZnO-NWs. X-ray diffraction, XANES and EXAFS measurements consistently suggest the lack of substitutional doping of Eu ions at the Zn ion sites in the interior of ZnO-NWs. The clear sharp and intense emission bands in the range 610-630 nm of Eu-treated ZnO-NWs originated from the intra-4f transition of Eu ions in the Eu(2)O(3)-like surface layer.
URI: http://dx.doi.org/10.1063/1.3304071
ISSN: 0003-6951
DOI: 10.1063/1.3304071
Volume: 96
Issue: 6
End Page: 
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