標題: Wavelength-Tunable InGaAs-Capped Quantum-Dot Infrared Photodetectors
作者: Lin, Wei-Hsun
Tseng, Chi-Che
Chao, Kuang-Ping
Mai, Shu-Cheng
Lin, Shih-Yen
Wu, Meng-Chyi
光電工程學系
Department of Photonics
關鍵字: Quantum-dot infrared photodetectors (QDIPs)
公開日期: 15-二月-2010
摘要: Quantum-dot infrared photodetectors (QDIPs) with InGaAs capping layers are investigated. Compared with the standard QDIP with 2.5-mono-layer (ML) InAs QDs, the detection wavelength is shifted from 6 to 7.9 m for an 8-nm InGaAs-capped QDIP. By decreasing the QD coverage from 2.5 to 2.0 ML, an even longer detection wavelength 10.4 m is observed, which is attributed to the higher energy levels of the QD excited states resulted from the smaller QDs. By further increasing the capping layer thickness to 12 nm, longer detection wavelengths with broad response 10-18 m is observed for the InGaAs-capped QDIP.
URI: http://dx.doi.org/10.1109/LPT.2009.2037727
http://hdl.handle.net/11536/5841
ISSN: 1041-1135
DOI: 10.1109/LPT.2009.2037727
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 22
Issue: 4
起始頁: 227
結束頁: 229
顯示於類別:期刊論文


文件中的檔案:

  1. 000275381000005.pdf