Title: Insight into the performance enhancement of double-gated polycrystalline silicon thin-film transistors with ultrathin channel
Authors: Lin, Zer-Ming
Lin, Horng-Chih
Chen, Wei-Chen
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: elemental semiconductors;semiconductor thin films;silicon;thermionic emission;thin film transistors
Issue Date: 15-Feb-2010
Abstract: In this letter, characteristics of independently-controllable double-gated polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with ultrathin channel are characterized and analyzed experimentally and theoretically. As compared with the single-gated mode where only one of the gates is used for driving the device, 1.3-2.1 fold increase in drive current is achieved under double-gated mode as the two gates are biased simultaneously for driving the device. A remarkable lowering of barrier height 7-12 meV in the latter case due to the coupling of the two gate biases is identified as the major origin for such performance enhancement.
URI: http://dx.doi.org/10.1063/1.3327336
http://hdl.handle.net/11536/5839
ISSN: 0003-6951
DOI: 10.1063/1.3327336
Journal: APPLIED PHYSICS LETTERS
Volume: 96
Issue: 7
End Page: 
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