|Title:||Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template|
|Authors:||Kuo, C. H.|
Chang, L. C.
Kuo, C. W.
Chi, G. C.
Department of Photonics
|Keywords:||InGaN-GaN;light-emitting diode (LED);nano;template|
|Abstract:||We demonstrated the formation of GaN-based nanorod (NR) structure by using self-assemble Ni nanoislands as the etching mask. It was found that crystal quality of the GaN epilayer prepared on an NR GaN template was significantly better than that prepared with a conventional low-temperature GaN nucleation layer. With the NR GaN template, it was found that 20-mA light-emitting diode (LED) output power can be enhanced by 39.8%, as compared to the conventional LED.|
|Journal:||IEEE PHOTONICS TECHNOLOGY LETTERS|
|Appears in Collections:||Articles|
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