Title: Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template
Authors: Kuo, C. H.
Chang, L. C.
Kuo, C. W.
Chi, G. C.
Department of Photonics
Keywords: InGaN-GaN;light-emitting diode (LED);nano;template
Issue Date: 15-Feb-2010
Abstract: We demonstrated the formation of GaN-based nanorod (NR) structure by using self-assemble Ni nanoislands as the etching mask. It was found that crystal quality of the GaN epilayer prepared on an NR GaN template was significantly better than that prepared with a conventional low-temperature GaN nucleation layer. With the NR GaN template, it was found that 20-mA light-emitting diode (LED) output power can be enhanced by 39.8%, as compared to the conventional LED.
URI: http://dx.doi.org/10.1109/LPT.2009.2038595
ISSN: 1041-1135
DOI: 10.1109/LPT.2009.2038595
Volume: 22
Issue: 4
Begin Page: 257
End Page: 259
Appears in Collections:Articles

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