標題: Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template
作者: Kuo, C. H.
Chang, L. C.
Kuo, C. W.
Chi, G. C.
光電工程學系
Department of Photonics
關鍵字: InGaN-GaN;light-emitting diode (LED);nano;template
公開日期: 15-二月-2010
摘要: We demonstrated the formation of GaN-based nanorod (NR) structure by using self-assemble Ni nanoislands as the etching mask. It was found that crystal quality of the GaN epilayer prepared on an NR GaN template was significantly better than that prepared with a conventional low-temperature GaN nucleation layer. With the NR GaN template, it was found that 20-mA light-emitting diode (LED) output power can be enhanced by 39.8%, as compared to the conventional LED.
URI: http://dx.doi.org/10.1109/LPT.2009.2038595
http://hdl.handle.net/11536/5837
ISSN: 1041-1135
DOI: 10.1109/LPT.2009.2038595
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 22
Issue: 4
起始頁: 257
結束頁: 259
顯示於類別:期刊論文


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  1. 000275381000015.pdf