|標題:||Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|摘要:||We investigated the formation and charge storage characteristics of Mo nanocrystals in silicon oxide and in silicon nitride by rapid thermal annealing of oxygen- and nitrogen-incorporated Mo and Si mixed layers. A high density of Mo nanocrystal (6 x 10(12) cm(-2)) was formed in the nitrogen-incorporated layer. Electrical analyses indicated that the memory window of the Mo nanocrystal embedded in the nitride is larger than that in the oxide. A reliability test showed that the Mo nanocrystal in the nitride has better reliability than the Mo nanocrystal in the oxide, which was explained by an electrical field simulation.|
|期刊:||JOURNAL OF PHYSICS D-APPLIED PHYSICS|
|Appears in Collections:||Articles|
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