標題: Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitride
作者: Lin, Chao-Cheng
Chang, Ting-Chang
Tu, Chun-Hao
Chen, Shih-Ching
Hu, Chih-Wei
Sze, Simon M.
Tseng, Tseung-Yuen
Chen, Sheng-Chi
Lin, Jian-Yang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 24-二月-2010
摘要: We investigated the formation and charge storage characteristics of Mo nanocrystals in silicon oxide and in silicon nitride by rapid thermal annealing of oxygen- and nitrogen-incorporated Mo and Si mixed layers. A high density of Mo nanocrystal (6 x 10(12) cm(-2)) was formed in the nitrogen-incorporated layer. Electrical analyses indicated that the memory window of the Mo nanocrystal embedded in the nitride is larger than that in the oxide. A reliability test showed that the Mo nanocrystal in the nitride has better reliability than the Mo nanocrystal in the oxide, which was explained by an electrical field simulation.
URI: http://dx.doi.org/10.1088/0022-3727/43/7/075106
http://hdl.handle.net/11536/5823
ISSN: 0022-3727
DOI: 10.1088/0022-3727/43/7/075106
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 43
Issue: 7
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000274318200009.pdf