標題: Self-Heating Effect on Bias-Stressed Reliability for Low-Temperature a-Si:H TFT on Flexible Substrate
作者: Kao, Shih-Chin
Zan, Hsiao-Wen
Huang, Jung-Jie
Kung, Bo-Cheng
光電工程學系
Department of Photonics
關鍵字: Flexible;hydrogenated amorphous silicon thin-film transistor (a-Si: H TFT);reliability;self-heating
公開日期: 1-三月-2010
摘要: Hydrogenated amorphous silicon thin-film transistors on colorless polyimide substrates were successfully fabricated at a low process temperature (160 degrees C). The gate leakage current is as low as 10(-13) A, while the field-effect mobility is 0.42 cm(2)V(-1) . s(-1), and the subthreshold swing is 0.77 V/dec. Using bias-temperature stress on devices with different channel widths, the enhancement of self-heating effect on bias-stressed reliability is investigated for the first time. Elevated temperature due to self-heating effect is estimated either by extending the bias-stressed model or by modifying the thermal equivalent circuit model. Degradation of device reliability on a bent substrate is also significant when self-heating effect is incorporated.
URI: http://dx.doi.org/10.1109/TED.2009.2039261
http://hdl.handle.net/11536/5803
ISSN: 0018-9383
DOI: 10.1109/TED.2009.2039261
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
Issue: 3
起始頁: 588
結束頁: 593
顯示於類別:期刊論文


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