標題: GaN/AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor deposition
作者: Huang, G. S.
Lu, T. C.
Yao, H. H.
Kuo, H. C.
Wang, S. C.
Sun, Greg
Lin, Chih-wei
Chang, Li
Soref, Richard A.
材料科學與工程學系
光電工程學系
Department of Materials Science and Engineering
Department of Photonics
關鍵字: X-ray diffraction;metal organic chemical vapor deposition;nitrides
公開日期: 1-一月-2007
摘要: The GaN/AlGaN active regions for terahertz (THz) quantum cascade lasers were grown by metal organic chemical vapor deposition (MOCVD). The surface of the sample was characterized by atomic force microscopy (AFM). The structure of this sample was evaluated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The XRD pattern and cross-sectional TEM images showed that a well-controlled quantum cascade GaN/AlGaN layers could be prepared. Optical properties of the active region of a terahertz GaN/AlGaN have been investigated by Fourier transform infrared (FTIR) spectrometer. It was found that the frequency of E-1(LO) phonon decreased in quantum cascade GaN/AlGaN structures. The phonon frequency shift could be attributed to the effect of phonon zone folding. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2006.10.106
http://hdl.handle.net/11536/5802
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2006.10.106
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 298
Issue: 
起始頁: 687
結束頁: 690
顯示於類別:會議論文


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