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dc.contributor.authorTai, Ya-Hsiangen_US
dc.contributor.authorHuang, Shih-Cheen_US
dc.contributor.authorChen, Po-Tingen_US
dc.date.accessioned2014-12-08T15:07:21Z-
dc.date.available2014-12-08T15:07:21Z-
dc.date.issued2010-03-01en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TDMR.2009.2033466en_US
dc.identifier.urihttp://hdl.handle.net/11536/5796-
dc.description.abstractThe phenomenon of channel shortening for p-type poly-Si thin-film transistors (TFTs) after stress is studied in this paper. Increased mobility, shifted threshold voltage V(TH), and reduced leakage current for the stressed device are observed. In addition, the capacitance-voltage (C-V) behavior for the stressed device exhibits the anomalous increase for the measuring gate voltage in the OFF region. A model illustrating how the trap electron mechanism would occur is provided. Furthermore, the degradation behavior of the p-type poly-Si TFT under gate ac stress in the OFF region is also studied. Similar degradation behaviors are observed for the gate-ac-stressed TFT for both of their I-V and C-V characteristics. A distributed device circuit model is proposed, and based on this model, it is proposed that the main voltage drop during gate ac stress in the OFF region could occur at the source and drain junction, which may, in turn, degrade the device. A gated p-i-n device under the same process condition is then adopted and dc stressed to verify the proposed mechanism. The similarity between the capacitance curves for the ac-stressed TFT and the dc-stressed gated p-i-n device proves the validity of the proposed mechanism.en_US
dc.language.isoen_USen_US
dc.subjectAC stressen_US
dc.subjectcapacitance-voltage (C-V)en_US
dc.subjectchannel shorteningen_US
dc.subjecthot-carrier stressen_US
dc.subjectpoly-Si thin-film transistor (TFT)en_US
dc.subjectreliabilityen_US
dc.titleCharacterization of the Channel-Shortening Effect on P-Type Poly-Si TFTsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TDMR.2009.2033466en_US
dc.identifier.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITYen_US
dc.citation.volume10en_US
dc.citation.issue1en_US
dc.citation.spage62en_US
dc.citation.epage70en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000275300600009-
dc.citation.woscount3-
Appears in Collections:Articles