標題: Characterization of the Channel-Shortening Effect on P-Type Poly-Si TFTs
作者: Tai, Ya-Hsiang
Huang, Shih-Che
Chen, Po-Ting
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: AC stress;capacitance-voltage (C-V);channel shortening;hot-carrier stress;poly-Si thin-film transistor (TFT);reliability
公開日期: 1-三月-2010
摘要: The phenomenon of channel shortening for p-type poly-Si thin-film transistors (TFTs) after stress is studied in this paper. Increased mobility, shifted threshold voltage V(TH), and reduced leakage current for the stressed device are observed. In addition, the capacitance-voltage (C-V) behavior for the stressed device exhibits the anomalous increase for the measuring gate voltage in the OFF region. A model illustrating how the trap electron mechanism would occur is provided. Furthermore, the degradation behavior of the p-type poly-Si TFT under gate ac stress in the OFF region is also studied. Similar degradation behaviors are observed for the gate-ac-stressed TFT for both of their I-V and C-V characteristics. A distributed device circuit model is proposed, and based on this model, it is proposed that the main voltage drop during gate ac stress in the OFF region could occur at the source and drain junction, which may, in turn, degrade the device. A gated p-i-n device under the same process condition is then adopted and dc stressed to verify the proposed mechanism. The similarity between the capacitance curves for the ac-stressed TFT and the dc-stressed gated p-i-n device proves the validity of the proposed mechanism.
URI: http://dx.doi.org/10.1109/TDMR.2009.2033466
http://hdl.handle.net/11536/5796
ISSN: 1530-4388
DOI: 10.1109/TDMR.2009.2033466
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 10
Issue: 1
起始頁: 62
結束頁: 70
顯示於類別:期刊論文