標題: Atomic layer deposition of epitaxial ZnO on GaN and YSZ
作者: Lin, Chih-Wei
Ke, Dong-Jie
Chao, Yen-Cheng
Chang, Li
Liang, Mei-Hui
Ho, Yen-Teng
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: interfaces;atomic layer epitaxy;oxides;semiconducting II-VI materials
公開日期: 1-一月-2007
摘要: ZnO thin films were epitaxially grown by atomic layer deposition on both of GaN/c-sapphire and yttria-stabilized zirconia (YSZ) substrates for comparison. X-ray diffraction, cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL) measurements show that epitaxial ZnO films have better structural qualities and optical properties on GaN than on YSZ, whereas atomic force microscopy (AFM) shows that the surface of ZnO films on YSZ is smoother than on GaN. From the ZnO thickness measured by TEM, the growth rate of ZnO on GaN is about one (0 0 0 2) monolayer per cycle, which is roughly four times of that on YSZ. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2006.10.139
http://hdl.handle.net/11536/5791
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2006.10.139
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 298
Issue: 
起始頁: 472
結束頁: 476
顯示於類別:會議論文


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