Title: Atomic layer deposition of epitaxial ZnO on GaN and YSZ
Authors: Lin, Chih-Wei
Ke, Dong-Jie
Chao, Yen-Cheng
Chang, Li
Liang, Mei-Hui
Ho, Yen-Teng
材料科學與工程學系
Department of Materials Science and Engineering
Keywords: interfaces;atomic layer epitaxy;oxides;semiconducting II-VI materials
Issue Date: 1-Jan-2007
Abstract: ZnO thin films were epitaxially grown by atomic layer deposition on both of GaN/c-sapphire and yttria-stabilized zirconia (YSZ) substrates for comparison. X-ray diffraction, cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL) measurements show that epitaxial ZnO films have better structural qualities and optical properties on GaN than on YSZ, whereas atomic force microscopy (AFM) shows that the surface of ZnO films on YSZ is smoother than on GaN. From the ZnO thickness measured by TEM, the growth rate of ZnO on GaN is about one (0 0 0 2) monolayer per cycle, which is roughly four times of that on YSZ. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2006.10.139
http://hdl.handle.net/11536/5791
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2006.10.139
Journal: JOURNAL OF CRYSTAL GROWTH
Volume: 298
Issue: 
Begin Page: 472
End Page: 476
Appears in Collections:Conferences Paper


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