標題: Effect of strain relaxation of oxidation-treated SiGe epitaxial thin films and its nanomechanical characteristics
作者: He, Bo-Ching
Wen, Hua-Chiang
Chinag, Tun-Yuan
Chang, Zue-Chin
Lian, Derming
Yau, Wei-Hung
Wu, Wen-Fa
Chou, Chang-Pin
機械工程學系
Department of Mechanical Engineering
關鍵字: Silicon-germanium;X-ray diffraction;Atomic force microscope;Hardness
公開日期: 1-三月-2010
摘要: In this study, we examined the effect of high-temperature oxidation treatment on the SiGe epitaxial thin films deposited on Si substrates. The X-ray diffraction (XRD), atomic force microscopy (AFM), and nanoindentation techniques were employed to investigate the crystallographic structure, surface roughness, and hardness (H) of the SiGe thin films, respectively. The high-temperature oxidation treatment led to Ge pileup at the surface of the SiGe thin films. In addition, strain relaxation occurred through the propagation of misfit dislocations and could be observed through the cross-hatch pattern (800-900 degrees C) and SiGe islands (1000 degrees C) at the surface of the SiGe thin films. Subsequent hardness (H) measurement on the SiGe thin films by continuous penetration depth method indicated that the phenomenon of Ge pileup caused a slightly reduced H (below 50 nm penetration depth), while relaxation-induced defects caused an enhanced H (above 50 nm penetration depth). This reveals the influence of composition and defects on the structure strength of high-temperature oxidation-treated SiGe thin films. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2009.12.022
http://hdl.handle.net/11536/5781
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2009.12.022
期刊: APPLIED SURFACE SCIENCE
Volume: 256
Issue: 10
起始頁: 3299
結束頁: 3302
顯示於類別:期刊論文


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