標題: Growth of epitaxial ZnO thin film on yttria-stabilized zirconia single-crystal substrate
作者: Chao, Yen-Cheng
Lin, Chih-Wei
Ke, Dong-Jie
Wu, Yue-Han
Chen, Hou-Guang
Chang, Li
Ho, Yen-Teng
Liang, Mei-Hui
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: interfaces;metalorganic chemical vapor deposition;oxides;semiconducting materials
公開日期: 1-一月-2007
摘要: ZnO growth on yttria-stabilized zirconia (YSZ) (I 1 1) single-crystal substrate has been carried out by metalorganic chemical vapor deposition (MOCVD). High-quality epitaxial ZnO has been evidenced by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Cross-sectional TEM from all deposited films reveals that the interface between ZnO and YSZ is atomically flat, and orientation relationship is deduced to be [1 (1) over bar 100](ZnO//)[11 (2) over bar](YSZ,) (2 (1) over bar(1) over bar0)(ZnO)//[001](YSZ) and (0 0 0 2)(ZnO)//(111)(YSZ). It has been found that surface roughness increases with the substrate temperature in the range of 500-700 degrees C. The growth rate also varies with the temperature. (c) 2006 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2006.10.165
http://hdl.handle.net/11536/5779
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2006.10.165
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 298
Issue: 
起始頁: 461
結束頁: 463
顯示於類別:會議論文


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