Title: Electric-Field Enhancement of a Gate-All-Around Nanowire Thin-Film Transistor Memory
Authors: Huang, Po-Chun
Chen, Lu-An
Sheu, Jeng-Tzong
Department of Materials Science and Engineering
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Keywords: Field enhancement;gate-all-around (GAA);gate injection;nanowire (NW);SONOS;thin-film transistor (TFT)
Issue Date: 1-Mar-2010
Abstract: A high-performance gate-all-around (GAA) poly-Si nanowire (NW) SONOS-type memory thin-film transistor (TFT) is presented. The presence of the corners of the GAA structure resulted in the program speed and memory window of this device being superior to those of a planar poly-Si TFT device. When erasing, planar devices exhibit a threshold-voltage shift resulting from gate injection; the GAA device was immune to this behavior. The presence of a nonuniform electric field in the channel region during programming and erasing was confirmed through simulation. The device also exhibited superior endurance and data-retention behavior.
URI: http://dx.doi.org/10.1109/LED.2009.2038177
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2038177
Volume: 31
Issue: 3
Begin Page: 216
End Page: 218
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