標題: Electric-Field Enhancement of a Gate-All-Around Nanowire Thin-Film Transistor Memory
作者: Huang, Po-Chun
Chen, Lu-An
Sheu, Jeng-Tzong
材料科學與工程學系
材料科學與工程學系奈米科技碩博班
Department of Materials Science and Engineering
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
關鍵字: Field enhancement;gate-all-around (GAA);gate injection;nanowire (NW);SONOS;thin-film transistor (TFT)
公開日期: 1-三月-2010
摘要: A high-performance gate-all-around (GAA) poly-Si nanowire (NW) SONOS-type memory thin-film transistor (TFT) is presented. The presence of the corners of the GAA structure resulted in the program speed and memory window of this device being superior to those of a planar poly-Si TFT device. When erasing, planar devices exhibit a threshold-voltage shift resulting from gate injection; the GAA device was immune to this behavior. The presence of a nonuniform electric field in the channel region during programming and erasing was confirmed through simulation. The device also exhibited superior endurance and data-retention behavior.
URI: http://dx.doi.org/10.1109/LED.2009.2038177
http://hdl.handle.net/11536/5777
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2038177
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 3
起始頁: 216
結束頁: 218
顯示於類別:期刊論文


文件中的檔案:

  1. 000274995300013.pdf