標題: A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics
作者: Su, Nai-Chao
Wang, Shui Jinn
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Charge-trapping-engineered Flash (CTEF);high-kappa;InGaZnO;metal-oxide-nitride-oxide-semiconductor (MONOS);nonvolatile memory (NVM)
公開日期: 1-三月-2010
摘要: We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-mu s speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-kappa layers.
URI: http://dx.doi.org/10.1109/LED.2009.2037986
http://hdl.handle.net/11536/5776
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2037986
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 3
起始頁: 201
結束頁: 203
顯示於類別:期刊論文


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  1. 000274995300008.pdf