標題: Enhancement of the light conversion efficiency of silicon solar cells by using nanoimprint anti-reflection layer
作者: Chen, J. Y.
Sun, K. W.
應用化學系
Department of Applied Chemistry
關鍵字: Nanoimprint;Anti-reflection;Sub-wavelength structure
公開日期: 1-三月-2010
摘要: In this report, the results of the fabrication of nanostructured Si molds by e-beam lithography and chemical wet etching are presented. A home-made pneumatic nanoimprint system was used to transfer the mold patterns to a PMMA layer on a Si template using the spin-coating replication/hot-embossing techniques. The patterned PMMA layer was peeled off from the Si template and directly transferred onto the surface of a poly-Si P-N junction solar cell device to serve as the anti-reflection (AR) layer. It provides a simple and low-cost means for large-scale Use in the production of AR layers for improving solar cell performance. A drastic reduction in reflectivity of the AR layer over a broad spectral range was demonstrated. In addition, the great improvement on the light harvest efficiency of the solar cells from 10.4% to 13.5% using the nanostructured PMMA layer as the AR layer was validated. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.solmat.2009.11.028
http://hdl.handle.net/11536/5743
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2009.11.028
期刊: SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume: 94
Issue: 3
起始頁: 629
結束頁: 633
顯示於類別:期刊論文


文件中的檔案:

  1. 000275073000038.pdf