標題: Etching of GaN by microwave plasma of hydrogen
作者: Tiwari, Rajanish N.
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 4-三月-2010
摘要: An etching process for GaN on a sapphire substrate using a microwave plasma of hydrogen has been studied. Scanning electron microscopy observations of the surface morphology show that the etching of GaN with H(2) plasma can lead to the formation of etch pits in hexagonal shape. The average size of hexagonal pits is greater than 200 nm. The effects of processing pressure and etching time are demonstrated.
URI: http://dx.doi.org/10.1088/0268-1242/25/3/035010
http://hdl.handle.net/11536/5736
ISSN: 0268-1242
DOI: 10.1088/0268-1242/25/3/035010
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 25
Issue: 3
結束頁: 
顯示於類別:期刊論文


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  1. 000274318300023.pdf