Title: Etching of GaN by microwave plasma of hydrogen
Authors: Tiwari, Rajanish N.
Chang, Li
材料科學與工程學系
Department of Materials Science and Engineering
Issue Date: 4-Mar-2010
Abstract: An etching process for GaN on a sapphire substrate using a microwave plasma of hydrogen has been studied. Scanning electron microscopy observations of the surface morphology show that the etching of GaN with H(2) plasma can lead to the formation of etch pits in hexagonal shape. The average size of hexagonal pits is greater than 200 nm. The effects of processing pressure and etching time are demonstrated.
URI: http://dx.doi.org/10.1088/0268-1242/25/3/035010
http://hdl.handle.net/11536/5736
ISSN: 0268-1242
DOI: 10.1088/0268-1242/25/3/035010
Journal: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 25
Issue: 3
End Page: 
Appears in Collections:Articles


Files in This Item:

  1. 000274318300023.pdf