標題: Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuations
作者: Li, Yiming
Hwang, Chih-Hong
Han, Ming-Hung
傳播研究所
電機工程學系
Institute of Communication Studies
Department of Electrical and Computer Engineering
公開日期: 5-Mar-2010
摘要: High-kappa/metal-gate and vertical channel transistors are well-known solutions to continue the device scaling. This work extensively explores the physics and mechanism of the intrinsic parameter fluctuations in nanoscale fin-type field-effect transistors by using an experimentally validated three-dimensional quantum-corrected device simulation. The dominance fluctuation sources in threshold voltage, gate capacitance and cutoff frequency have been found. The emerging fluctuation source, workfunction fluctuation, shows significant impacts on DC characteristics; however, its impact is reduced in AC characteristics due to the screening effect of the inversion layer. Additionally, the channel discrete dopant may enhance the electric field and therefore make the averaged cutoff frequency of fluctuated devices larger than the nominal value of cutoff frequency.
URI: http://dx.doi.org/10.1088/0957-4484/21/9/095203
http://hdl.handle.net/11536/5730
ISSN: 0957-4484
DOI: 10.1088/0957-4484/21/9/095203
期刊: NANOTECHNOLOGY
Volume: 21
Issue: 9
結束頁: 
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