標題: Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology
作者: Liu, Po-Tsun
Huang, Chen-Shuo
Huang, Yi-Ling
Lin, Jing-Ru
Cheng, Szu-Lin
Nishi, Yoshio
Sze, S. M.
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: annealing;dielectric materials;elemental semiconductors;fluids;germanium;MIS devices;oxidation;silicon compounds
公開日期: 15-Mar-2010
摘要: Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO(2)/germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO(2)/Ge interface at 150 degrees C. A smooth interfacial GeO(2) layer between gate SiO(2) and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 degrees C can be restored to a extent similar to the initial state.
URI: http://dx.doi.org/10.1063/1.3365177
http://hdl.handle.net/11536/5722
ISSN: 0003-6951
DOI: 10.1063/1.3365177
期刊: APPLIED PHYSICS LETTERS
Volume: 96
Issue: 11
結束頁: 
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