Title: Variable-range-hopping conduction processes in oxygen deficient polycrystalline ZnO films
Authors: Huang, Yung-Lung
Chiu, Shao-Pin
Zhu, Zhi-Xin
Li, Zhi-Qing
Lin, Juhn-Jong
Department of Electrophysics
Institute of Physics
Keywords: electrical resistivity;hopping conduction;II-VI semiconductors;semiconductor thin films;sputtered coatings;wide band gap semiconductors;zinc compounds
Issue Date: 15-Mar-2010
Abstract: We have fabricated oxygen deficient polycrystalline ZnO films by the rf sputtering deposition method. To systematically investigate the charge transport mechanisms in these samples, the electrical resistivities have been measured over a wide range of temperature from 300 K down to liquid-helium temperatures. We found that below about 100 K, the variable-range-hopping (VRH) conduction processes govern the charge transport properties. In particular, the Mott VRH conduction process dominates at higher temperatures, while crossing over to the Efros-Shklovskii (ES) VRH conduction process at lower temperatures. The crossover occurred at temperatures as high as a few tens degrees kelvin. Moreover, the temperature behavior of resistivity over the entire VRH conduction regime from the Mott-type to the ES-type process can be well described by a universal scaling law.
URI: http://dx.doi.org/10.1063/1.3357376
ISSN: 0021-8979
DOI: 10.1063/1.3357376
Volume: 107
Issue: 6
End Page: 
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