Title: Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates
Authors: Lin, Meng-Hung
Wen, Hua-Chiang
Huang, Chih-Yung
Jeng, Yeau-Ren
Yau, Wei-Hung
Wu, Wen-Fa
Chou, Chang-Pin
機械工程學系
Department of Mechanical Engineering
Keywords: Gallium nitride;Nanoindentation;Atomic force microscopy
Issue Date: 15-Mar-2010
Abstract: Gallium nitride (GaN) epilayers was deposited on a-axis sapphire substrate by means of metal-organic chemical vapor deposition (MOCVD) method. The GaN epilayers has been investigated in their repetition pressure-induced impairment events from nanoindentation technique and, the relative deformation effect was observed from atomic force microscopy (AFM). From the morphological studies, it is revealed that none of crack and particle was found even after the indentation beyond the critical depth on the residual indentation impression. The 'pop-in' event was explained by the interaction of the deformed region, produced by the indenter tip, with the inner threading dislocations in the GaN films. Pop-in events indicate the generation and motion of individual dislocation, which is measured under critical depth and, no residual deformation of the GaN films is observed. (C) 2009 Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2009.12.054
http://hdl.handle.net/11536/5716
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2009.12.054
Journal: APPLIED SURFACE SCIENCE
Volume: 256
Issue: 11
Begin Page: 3464
End Page: 3467
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