標題: Ultrathin N2O-oxide with atomically flat interfaces
作者: Chin, A
Chen, WJ
Lin, BC
Kao, JH
Tsai, C
Huang, JCM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-1997
摘要: Silicon oxide has been grown in a low pressure furnace using N2O. An atomically fiat SiO2 (N2O)/Si interface, as determined by high resolution transmission electron microscopy, has been achieved by desorbing the native oxide in situ for oxide thicknesses 11 to 38 Angstrom. The thickness variation of a 20 Angstrom N2O-oxide, grown on a 4 in. substrate <1 Angstrom. The excellent uniformity is attributed to the increased mean-free path of N2O molecules in the low pressure environment. Since only one Si plane was distorted beneath the N2O-oxide/Si interface, this suggests that thermal stress is not the limiting factor for obtaining an atomically smooth interface.
URI: http://dx.doi.org/10.1149/1.1837623
http://hdl.handle.net/11536/571
ISSN: 0013-4651
DOI: 10.1149/1.1837623
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 144
Issue: 5
起始頁: L97
結束頁: L99
顯示於類別:期刊論文


文件中的檔案:

  1. A1997XD00600002.pdf