標題: A modified multi-chemicals spray cleaning process for post-CMP cleaning application
作者: Wang, YL
Liu, C
Feng, MS
Tseng, WT
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: chemical mechanical polishing;post-CMP cleaning;tungsten CMP;multi-chemicals spray cleaning;metallic contamination
公開日期: 1-一月-1998
摘要: Chemical mechanical planarization (CMP) has become widely accepted for the planarization of device interconnect structures in deep submicron semiconductor manufacturing. Attractive features of CMP include (i) global planarization and (ii) low defect and contamination level. The main challenge of cleaning is to remove the residual particles as well as the metallic contamination. In this paper, a modified post-CMP clean up-multi-chemicals spray cleaning process-is addressed in detail. This new process has been successfully applied to both oxide and tungsten CMP cleaning. The process provides comparable defect performance and excellent removal of metallic contamination to the scrubbing process which has been widely accepted in current post-CMP cleaning usage. The new clean up development strategy also contributes to their low cost of ownership (Co0) and good process flexibility as well as the minimizing cross-contamination. (C) 1998 Elsevier Science S.A.
URI: http://hdl.handle.net/11536/57
ISSN: 0254-0584
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 52
Issue: 1
起始頁: 23
結束頁: 30
顯示於類別:期刊論文


文件中的檔案:

  1. 000071383500003.pdf