標題: Investigation of Si-doped p-type AlGaAs/GaAs, AlGaAs/InGaAs quantum well infrared photodetectors and multiquantum wells grown on (311)A GaAs
作者: Chin, A
Liao, CC
Chu, J
Li, SS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-May-1997
摘要: We have studied two Si-doped p-type quantum well infrared photodetectors (QWIPs) using AlGaAs/GaAs and AlGaAs/InGaAs grown on (3 1 1)A GaAs. The Si-doped AlGaAs/GaAs p-QWIP exhibits a symmetrical dark I-V characteristic at all the measured temperatures from 40 to 120 K. The strained p-type AlGaAs/InGaAs QWIP exhibits a slightly asymmetrical dark I-V characteristic, but is markedly less asymmetrical than that doped with beryllium. The slight asymmetry in dark I-V characteristic and the large blue-shift in responsivity spectra may be due to the thickness modulation observed from TEM and the red-shift of PL peak energy, where PL peak energies from (3 1 1)A AlGaAs/InGaAs multiple quantum wells are red-shifts of 7 and 22 meV to the side-by-side grown (1 0 0).
URI: http://dx.doi.org/10.1016/S0022-0248(96)00922-0
http://hdl.handle.net/11536/569
ISSN: 0022-0248
DOI: 10.1016/S0022-0248(96)00922-0
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 175
Issue: 
起始頁: 999
結束頁: 1003
Appears in Collections:Conferences Paper


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  1. A1997XX17900057.pdf