標題: Study of electric characteristics and diffusion effects of 2-methyl-9,10-di(2-naphthyl)anthracene doped with cesium fluoride by admittance spectroscopy
作者: Hsieh, Ming-Ta
Ho, Meng-Huan
Lin, Kuan-Heng
Chen, Jenn-Fang
Chen, Teng-Ming
Chen, Chin H.
電子物理學系
應用化學系
友訊交大聯合研發中心
Department of Electrophysics
Department of Applied Chemistry
D Link NCTU Joint Res Ctr
關鍵字: aluminium;caesium compounds;deep levels;diffusion;electrical conductivity;electrical resistivity;Fermi level;organic light emitting diodes;organic semiconductors;semiconductor doping;semiconductor-metal boundaries
公開日期: 29-Mar-2010
摘要: In this work, the admittance spectroscopy studies show that doping cesium fluoride (CsF) into 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) can greatly decrease the resistance of MADN and raises the Fermi level from deep level to only 0.1 eV below the lowest unoccupied molecular orbital, resulting in enhancing the electron injection. In addition, the diffusion width of CsF from doped MADN layer into tris(8-quinolinolato)aluminium is clearly observed by capacitance-frequency measurement and is about 9.4 nm. Moreover, the diffusion width is significant to be affected by external thermal.
URI: http://dx.doi.org/10.1063/1.3377921
http://hdl.handle.net/11536/5621
ISSN: 0003-6951
DOI: 10.1063/1.3377921
期刊: APPLIED PHYSICS LETTERS
Volume: 96
Issue: 13
結束頁: 
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